Dr. Akin Akturk, co-founder and Vice President Dr. Akturk earned his Ph.D. at the end of spring 2006 from the University of Maryland, College Park, which also awarded him with an M.S. degree in 2001. He is the recipient of the NASA Tech Brief Award from the Inventions and Contributions Board at NASA headquarters on the design of a hybrid AlGaN-SiC photodiode for deep UV photon detection. His recent research/work interests include performance modeling of nanoscale MOSFETs, and coupled thermal modeling of devices and planar and three-dimensional integrated circuits. He has done extensive non-isothermal modeling of devices such as SOI-MOSFETs and MOSFETs with silicon or heterojunctions in their channels. His analyses cover a wide temperature spectrum ranging from cryogenic temperatures to couple hundred degrees above room temperature. Additionally, he developed novel algorithms to couple device operation to chip heating and performance. He participated in the design and investigation of three-dimensional heterogeneous integration technologies, where he mainly focused on sensing and modeling self-heating effects. Through simulation, he demonstrated the concept of using thermal conduits to remove heat from the hot spots of the chip. He along with his colleagues was awarded a patent for heat removal by the US patent office. In addition, he investigated novel device and sensor designs including carbon nanotubes and carbon nanotube embedded transistors. He has published various papers on full-chip heating and novel MOSFET configurations. He also has designed and had fabricated several integrated circuits for temperature sensing.

Dr. Neil Goldsman, co-founder, President, and professor in the Electrical and Computer Engineering Department at the University of Maryland at College Park. At the University, Dr. Goldsman directs the Mixed Signal VLSI Design Laboratory, Distributed Sensor and Communication Networks Group, and the Semiconductor Simulation Laboratory. His recent work has focused on ad-hoc sensor networks, high temperature and cryogenic electronics, and semiconductor device modeling. He regularly serves on the executive, technical and organizing committees of leading international professional conferences. He has served as both the conference chair and the symposium chair of the International Semiconductor Device Research Symposium. For the International Conference on Simulation of Semiconductor Processes and Devices, Dr. Goldsman has served as the chair of the Device Physics subcommittee, and regularly serves on the technical committee. Prof. Goldsman was the technical director for the Maryland Governor's Institute of Technology program. His research has attracted more than $4 million of support to the University of Maryland. His work has been sponsored by leading governmental and industrial organizations including NSF, SRC, NSA, ARL, ONR, ARO, DHS, NIH, Intel Corporation and LSI Logic Corporation. Dr. Goldsman is the co-recipient of the IEEE Dasher Award; the NSF Research Initiation Award; the University of Maryland's George Corcoran award; Invention of the Year and Business Plan Awards; and Cornell University's Post Foundation Scholarship. Goldsman has published more than one hundred fifty peer-reviewed technical papers, and supervised the design of over fifty ICs. He has authored two educational texts in electronics that have been used for two courses at the University of Maryland. Recently, Dr. Goldsman has focused on commercializing his research, whereupon he received 7 patents in the last several years. Dr. Goldsman is also a serial entrepreneur. In 2004, Dr. Goldsman and a colleague founded TRX Systems, where he served as president. In 2007 he sold his portion of TRX, and focused on establishing two new high-tech companies. Dr. Goldsman received his Ph.D. from Cornell University with a minor in Applied Physics and major in Electrical Engineering.

Dr. Siddharth Potbhare, Senior Scientist and Vice President. Dr. Potbhare received his Ph.D. in Electrical Engineering from the University of Maryland, College Park in 2008. He is working on developing advanced physical models and characterizing the operation of Silicon Carbide MOSFETs and DMOSFETs at high temperatures. His research is focused on understanding the physics of transport in SiC devices, and on modeling their performance in DC and switching environments such as power converter circuits. He has published many papers on SiC device modeling, algorithm development, and device characterization in peer-reviewed journals and different industry conferences. His interests include novel semiconductor materials, and design of advanced energy efficient microelectronic devices and circuits. Dr. Potbhare has been the Principal Investigator on two NASA Phase II SBIRs on cryogenic and radiation modeling of semiconductor technology. He earned the B.E. (B.S.) degree in electronics engineering from the M. S. University, Vadodara, India in 2001 and the M.S. degree in electrical engineering from the University of Maryland, College Park, USA, in 2005.

Dr. James M. McGarrity, Chief Radiation Effects Scientist. Prior to his current position, Dr. McGarrity was Senior Research Scientist (ST) for the Sensors and Electron Devices Directorate of the Army Research Laboratory, Adelphi, Maryland. This position was attained in April 1991 in recognition of his career achievements in the study of radiation effects in semiconductor devices and radiation hardening of integrated circuits. As Senior Research Scientist, Dr. McGarrity performed research to improve the survivability of electronics and has served as technical advisor to the several other government agencies. Prior to that assignment he served as the Chief of the Radiation Effects Physics Branch of the former Harry Diamond Laboratories. His other assignments have been Deputy for Radiation Hard Technology for the OSD Very High Speed Integrated Circuits (VHSIC) Office (1983 - 1988) and R&D supervisor and researcher in radiation effects in electronics at HDL. Dr. McGarrity is a Fellow of the IEEE for his radiation effects research on silicon metal oxide semiconductor (MOS) devices and has over eighty journal publications.

Dr. Martin Peckerar, Executive Scientist. Dr. Peckerar holds a B.S. from Stony Brook University, and M.S. and Ph.D. degrees from UMD. He has held positions in the Westinghouse Advanced Technology Laboratory and at the U.S. Naval Research Laboratory, heading the Nanoelectronics Processing Facility at the latter. Dr. Peckerar has worked on advanced MOS process development, where he advanced the deep-depletion CCD for x-ray and for IR imaging, developed further devices for deep-UV imaging, and co-invented the laser-plasma source for X-ray lithography. He served as the Principal Navy Technical Officer on the DARPA Advanced Lithography Program (1989-2003), and the US Navy consultant to the State Department on strategic arms control for electronic weapons systems. He has published extensively in the area of silicon and compound semiconductor photovoltaics, and has been active in the development of rectennas and hybrid battery/supercapacitor cells for embedded electronics. His further innovations include algorithms for e-beam proximity control in mask manufacture, co-invention of the polysiloxane self-assembled film imaging process, a maximum-entropy image reconstruction chip, fast-Fourier integrated circuits based on neural net principles, and a tomography imager chip. He was elected a Fellow of the IEEE in 1993. He is the Editor of Journal of Microelectronic Engineering.