High-Performance SiC Semiconductor Devices
By CoolCAD

CoolCAD’s pioneering research into wide bandgap SiC semiconductor material led us to develop of a variety of innovative high-temperature power devices for the next generation of power electronics. Our high-performance products operate at temperature above 400°C, and some can even operate at 500°C. Our experienced scientists, engineers and technicians design and manufacture CoolCAD SiC semiconductor devices at our state-of-the-art manufacturing facility.

High-Temperature SiC ICs

Made from wide bandgap SiC semiconductor materials our ICs operate at temperatures as high as 500°C, that’s much higher than the 200°C limit of traditional silicon ICs. Our SiC-based ICs are manufactured using our proprietary CMOS fabrication technology and integrates both analog and digital functionalities on the same circuit so it can function as an amplifier, oscillator, timer, counter, logic gate, computer memory or microcontroller.

Applications include CMOS logic circuits and smart sensors for monitoring and controlling jet engines, rocket engines, automotive engines, down-hole oil and gas drilling, power generation and furnace exhaust systems.

CoolCAD_650V_0522C CoolCAD_1200V_0322SiC Power MOSFETs

CoolCAD Power MOSFETs exceed power, efficiency and portability capabilities of standard silicon devices and are available in a variety of breakdown voltages (650V, 1200V, 1700V & 3300V) and current ratings. They have low on-resistance and low leakage in the blocking state. Fabricated on high-quality SiC epitaxial layers, our proprietary fabrication process includes carefully chosen annealing procedures to ensure high-quality SiC-SiO₂ gate oxide dielectric layer. The doping profile, neck region and edge termination ensure extremely low Ron and high breakdown voltage.

Applications include electromechanical power converters, DC to DC, AC to DC and DC to AC converters, switching power supplies, electric vehicles, hybrid vehicles, solar and wind energy power converters.

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SiC Power Diodes

Our Schottky and Junction Barrier Schottky (JBS) diodes with low on-resistance and low leakage in the blocking state are available in a variety of breakdown voltages (650V, 1200V, 1700V & 3300V) and current ratings. Fabricated on high-quality SiC epitaxial layers, our proprietary fabrication processes includes carefully chosen annealing procedures to ensure high-quality metal-semiconductor contacts and barriers to provide low leakage and high reliability. CoolCAD SiC power diodes work well in conjunction with CoolCAD SiC power MOSFETs for increased power converter switching speed.

UV Avalanche SiC Photodiodes

Our SiC-based Avalanche Photodiodes (APDs) can detect very low-level UV light. In standard photodetectors one photon detected will generate one electron of current. With CoolCAD APDs, one photon gives rise to almost one million electrons of current. And our UV APDs are “Solar Blind,” which means they are not affected by visible light and can detect very faint UV signals in broad daylight without the need of optical filters. Our APDs can also operate in “Geiger Mode” where a single UV photon generates an electric pulse, so that photons can be counted using standard pulse counting electronics.

Applications include water and air sterilization, fire detection, surface defect detection, engine monitoring and control and UV curing. Because our APDs are especially adept at detecting extremely low intensity UV optical sources in broad daylight, they are ideal for spectral imaging and missile and rocket detection.

UV Linear SiC Photodiodes

CoolCAD UV Linear Photodiodes generate photocurrent that is proportional to the amount of incident UV light in the range of 190nm to 350nm. They are fabricated from SiC using our proprietary SiC semiconductor processing techniques. Our Linear Photodiodes have high responsivity and exhibit extremely low dark current. Since they do not suffer from visible light saturation, they can be used in broad daylight without an optical filter.

Applications include water and air sterilization, fire detection, surface defect detection, engine monitoring and control and UV curing.

UV SiC Focal Plane Arrays

CoolCAD designs and fabricates SiC Focal Plane Arrays for UV imaging applications. Our unique UV passive pixel arrays are constructed with distinct isolation between pixels to minimize cross-talk and optimize resolution. They are available in two sizes (32×32 and 64×64) with 50 and 100µm pitch and pixel isolation and generate photocurrent that is proportional to the amount of UV incident light in the range of 200nm to 350nm. Our pixel arrays do not respond to visible light but are designed to function at their best in broad daylight, even without a filter.

Applications include UV imaging of surface defects, UV instrumentation and spectroscopy and photographing objects and scenes in the UV spectrum.

High-Performance SiC Semiconductor Devices By CoolCAD