High-Temperature SiC Power Devices

CoolCAD’s pioneering research into the wide bandgap SiC semiconductor material led them to develop innovative high-temperature power devices for NASA. Today, CoolCAD’s proprietary SiC semiconductor fabrication technology produces a variety of high-performance power devices for multiple applications that operate at temperatures above 400°C, some even successfully at 500°C.

Our engineers manufacture high-performance SiC power devices in our state-of-the-art facility for the most demanding applications.

High-Temperature SiC Integrated Circuits (ICs)

Made from the wide bandgap SiC semiconductor, our ICs operate at temperatures as high as 500°C, much higher than the ~220°C limit of traditional silicon ICs. Our SiC-based ICs are manufactured using our proprietary CMOS fabrication technology which integrates both analog and digital functionalities on the same circuit. So we can provide amplifiers, oscillators, timers, counters, or logic gates as the requirements dictate. We are also developing computer memories and microcontrollers.

CoolCAD SiC Technology is being used to manufacture CMOS logic circuits and smart sensors for monitoring and controlling jet engines, rocket engines, automotive engines, oil, gas and geothermal drilling sensor systems, power generation, and furnace exhaust systems.

High-Temperature SiC Power MOSFETs

CoolCAD Power MOSFETs exceed power, efficiency and portability capabilities of standard silicon devices and are available in a variety of breakdown voltages (650V, 1200V, 1700V & 3300 V) and current ratings. They have low on-resistance and low leakage in the blocking state. Fabricated on high-quality SiC epitaxial layers, our proprietary fabrication process includes carefully chosen annealing procedures to ensure high-quality SiC-SiO₂ gate oxide dielectric layer. The doping profile, neck region and edge termination ensure extremely low Ron and high breakdown voltage.

Applications include electromechanical power converters, DC to DC, AC to DC and DC to AC converters, switching power supplies, electric vehicles, hybrid vehicles, and solar and wind energy power converters.

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SiC Power Diodes

Our Schottky and Junction Barrier Schottky (JBS) diodes with low on-resistance and low leakage in the blocking state are available in a variety of breakdown voltages (650V, 1200V, 1700V & 3300V) and current ratings. Fabricated on high-quality SiC epitaxial layers, our proprietary fabrication processes includes carefully chosen annealing procedures to ensure high-quality metal-semiconductor contacts and barriers to provide low leakage and high reliability. CoolCAD SiC power diodes work well in conjunction with CoolCAD SiC power MOSFETs for increased power converter switching speed.

Applications include electromechanical power converters, DC to DC, AC to DC and DC to AC converters, switching power supplies, electric vehicles, hybrid vehicles, and solar and wind energy power converters.