Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface During Nitric Oxide Passivation – A First Principles Study

Date: September 29, 2022

Time: 12:00 am - 12:00 am

By D. P. Ettisserry, N. Goldsman, A. Akturk, and A. J. Lelis
May 2016, Material Science Forum, Volume 858, Pages 465-468