Modeling of Oxygen Vacancy Hole Trap Activation in 4H-SiC MOSFETs Using Density Functional Theory and Rate Equation Analysis

Date: September 29, 2022
Time: 12:00 am - 12:00 am

By D. P. Ettisserry, N. Goldsman, A. Akturk, and A. J. Lelis
October 8, 2015, International Conference on Simulation of Semiconductor Processes and Devices

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