The Intrinsic Atomic-Level Surface Roughness Mobility Limit of 4H-SiC Date: September 29, 2022Time: 12:00 am - 12:00 am By C. Darmody and N. GoldsmanJune 04, 2018, Journal of Applied Physics, Volume 124, Issue 10 mrouiller The Effects of Radiation on the Terrestrial Operation of SiC MOSFETs Reliability Testing of SiC MOS Devices at 500oC