CoolCAD Power SiC MOSFETs exceed power, efficiency and portability capabilities of standard silicon devices and are available in a variety of breakdown voltages and current ratings. They have low on-resistance and low leakage in the blocking state. Fabricated on high-quality SiC epitaxial layers, our proprietary fabrication process includes carefully chosen annealing procedures to ensure a high-quality SiC-SiO2 gate oxide dielectric layer. Doping profile, neck region, and edge termination ensure extremely low Ron and high breakdown voltage.

Applications include electromechanical power converters, DC to DC, AC to DC and DC to AC converters, switching power supplies, electric vehicles, hybrid vehicles, solar and wind energy power converters.